Effect of Thermal Annealing on the Optical Properties of In-Si-O/Ag/In-Si-O Multilayer

被引:0
|
作者
Yu, Jiao Long [1 ]
Lee, Sang Yeol [1 ]
机构
[1] Cheongju Univ, Dept Semicond Engn, Cheongju Chungbuk 360764, South Korea
基金
新加坡国家研究基金会;
关键词
TCO; Low-e Coating; OMO; Transmittance Curve; Drude Model; PLASMONIC MATERIALS; SILVER;
D O I
10.1166/jnn.2017.14054
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Low emissive transparent multilayers were fabricated with amorphous Si-doped indium oxide (ISO) transparent semiconductor and metallic Ag by Ag thickness. High transmittance in the visible range of the as-deposit ISO/Ag/ISO multilayer was verified in the experiment results, and the optical properties of an oxide-metal-oxide tri-layer were sensitive to the silver layer's thickness. After annealing, the transmittance in the visible range increased by over 10%, and low emissivity for infrared was maintained.
引用
收藏
页码:3477 / 3479
页数:3
相关论文
共 50 条
  • [1] Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer
    Yu, Jiao Long
    Lee, Sang Yeol
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2016, 17 (04) : 201 - 203
  • [2] Amorphous In-Si-O Films Fabricated via Solution Processing
    Jan, Hani Esmael
    Hoang, Ha
    Nakamura, Tsubasa
    Koga, Tomoaki
    Ina, Toshiaki
    Uruga, Tomoya
    Kizu, Takio
    Tsukagoshi, Kazuhito
    Nabatame, Toshihide
    Fujiwara, Akihiko
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (06) : 3610 - 3614
  • [3] Amorphous In-Si-O Films Fabricated via Solution Processing
    Hani Esmael Jan
    Ha Hoang
    Tsubasa Nakamura
    Tomoaki Koga
    Toshiaki Ina
    Tomoya Uruga
    Takio Kizu
    Kazuhito Tsukagoshi
    Toshihide Nabatame
    Akihiko Fujiwara
    Journal of Electronic Materials, 2017, 46 : 3610 - 3614
  • [4] Amorphous Si-Zn-Sn-O Thin Film Transistor with In-Si-O as Transparent Conducting Electrodes
    Hwang, Jin Young
    Lee, Sang Yeol
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2019, 20 (04) : 371 - 374
  • [5] Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors
    Kurishima, Kazunori
    Nabatame, Toshihide
    Mitoma, Nobuhiko
    Kizu, Takio
    Aikawa, Shinya
    Tsukagoshi, Kazuhito
    Ohi, Akihiko
    Chikyow, Toyohiro
    Ogura, Atsushi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (06):
  • [6] Transparent and flexible amorphous In-Si-O films for flexible organic solar cells
    Lee, Hye-Min
    Kang, Sin-Bi
    Chung, Kwun-Bum
    Kim, Han-Ki
    APPLIED PHYSICS LETTERS, 2013, 102 (02)
  • [7] Solution processed In-Si-O thin film transistors on hydrophilic and hydrophobic substrates
    Hoang, Ha
    Ueta, Yuki
    Tsukagoshi, Kazuhito
    Nabatame, Toshihide
    Bui Nguyen Quoc Trinh
    Fujiwara, Akihiko
    THIN SOLID FILMS, 2020, 698
  • [8] Transition from a nanocrystalline phase to an amorphous phase in In-Si-O thin films: The correlation between the microstructure and the optical properties
    Park, Jun-Woo
    So, Hyeon Seob
    Lee, Hye-Min
    Kim, Hyo-Joong
    Kim, Han-Ki
    Lee, Hosun
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (15)
  • [9] Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors
    Yao, Guangyu
    Ma, Hanbin
    Sambandan, Sanjiv
    Nathan, Arokia
    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020), 2020,
  • [10] Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors
    Aikawa, Shinya
    Mitoma, Nobuhiko
    Kizu, Takio
    Nabatame, Toshihide
    Tsukagoshi, Kazuhito
    APPLIED PHYSICS LETTERS, 2015, 106 (19)