Ettingshausen effect in integer quantum Hall systems

被引：0
|
作者：
Komori, Y [1 ]
Okamoto, T [1 ]
机构：
[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Evidence of the Ettingshausen effect has been observed in the breakdown regime of the integer quantum Hall effect. Differential diagonal resistances in the two micro Hall bars attached to the current channel edges indicate an electron temperature difference in the direction perpendicular to the current. The observed polarity of the Ettingshausen effect is consistent with Akera's hydrodynamic equations.
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页码：555 / 556
页数：2
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