Interacting Dirac Fermions on a Topological Insulator in a Magnetic Field

被引:12
|
作者
Apalkov, Vadim M. [1 ]
Chakraborty, Tapash [2 ]
机构
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Univ Manitoba, Dept Phys & Astron, Winnipeg, MB R3T 2N2, Canada
关键词
GRAPHENE; GRAPHITE; DIAMAGNETISM;
D O I
10.1103/PhysRevLett.107.186801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly nonmonotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.
引用
收藏
页数:5
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