Electrical degradation of triarylamine-based light-emitting polymer diodes monitored by micro-Raman spectroscopy

被引:60
|
作者
Kim, JS
Ho, PKH
Murphy, CE
Seeley, AJAB
Grizzi, I
Burroughes, JH
Friend, RH
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Cambridge Display Technol Ltd, Cambridge CB3 0TX, England
关键词
D O I
10.1016/j.cplett.2003.12.124
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Although much progress has been made in improving polymer light-emitting diode performance, there has been little work to address device intrinsic degradation mechanisms due to the challenge of tracking minute chemical reactions in the 100-nm-thick buried active layers during operation. Here we have elucidated a hole-mediated electrical degradation of triarylamine-based blue polymer diodes using in situ Raman microspectroscopy. A slow irreversible hole-doping of polymer adjacent to the hole-injecting conducting-polymer leads to formation of oxidised triarylamine species counterbalanced by anions from the conducting-polymer. These charged species act as luminescence quenchers and hinder further hole injection across the interface leading to significant decreases in current density at low voltages. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:2 / 7
页数:6
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