Electronic structure of InAs((1)over-bar-(1)over-bar-(1)over-bar)2x2 and InSb((1)over-bar-(1)over-bar-(1)over-bar)2x2 studied by angle-resolved photoelectron spectroscopy

被引：11
|
作者：
Andersson, CBM
Karlsson, UO
Hakansson, MC
Olsson, LO
Ilver, L
Nilsson, PO
Kanski, J
Persson, PES
机构：
[1] LUND UNIV,INST PHYS,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN
[2] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
[3] SAAB AB,MIL AIRCRAFT,S-58188 LINKOPING,SWEDEN
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.54.1833
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure of molecular-beam-epitaxy-grown InAs((111) over bar)2x2 and InSb((111) over bar)2x2 surfaces is investigated by angle-resolved photoelectron spectroscopy. Valence band spectra, and dispersions of five surface-related structures, are presented. The qualitative similarities of data from the two surfaces indicate that they are very similar, with respect to atomic and electronic structure. Comparisons with other (111) surfaces support the identification of the surface-related structures.
引用
收藏
页码：1833 / 1840
页数：8
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