Growth interface of CdZnTe grown from Te solution with THM technique under static magnetic field

被引：36
|
作者：
Wang, Y
Kudo, K
Inatomi, Y
Ji, RB
Motegi, T
机构：
[1] Inst Space & Astronaut Sci, Japan Aerosp Explorat Agcy, Kanagawa 2298510, Japan
[2] Chiba Inst Technol, Chiba 2758588, Japan
[3] Kunming Inst Phys, Yunnam 650223, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 284卷 / 3-4期
基金：
日本学术振兴会;
关键词：
growth interface; magnetic field; Te solution; traveling heater method; CdZnTe crystal;
D O I：
10.1016/j.jcrysgro.2005.02.076
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth interface of CdZnTe crystals grown from Te solution with the THM technique under static magnetic field was investigated by a quenching technique during crystal growth. The results indicated that the growth interface obtained with a growth rate of 4 mm/day tinder magnetic induction of 3 T was improved greatly during solidification, as was the micro-structure of CdZnTe crystals. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：406 / 411
页数：6
相关论文
共 50 条
  • [1] Growth and structure of CdZnTe crystal from Te solution with THM technique under static magnetic field
    Wang, Yue
    Kudo, Katsuaki
    Inatomi, Yuko
    Ji, Rongbin
    Motegi, Tetsuichi
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1551 - E1556
  • [2] Growth and interface study of 2 in diameter CdZnTe by THM technique
    Roy, U. N.
    Weiler, S.
    Stein, J.
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (19) : 2840 - 2845
  • [3] Investigation of the diffusion and crystal growth of CdZnTe in Te solution using the traveling heater method under axial static magnetic field
    Zhang, Jijun
    Liu, Wanping
    Wei, Jiongjiong
    Xie, Chen
    Huang, Yingdong
    Liu, Kun
    Liu, Hao
    Qi, Yongwu
    Cao, Meng
    Wang, Linjun
    Liang, Xiaoyan
    CRYSTENGCOMM, 2025, 27 (05) : 644 - 652
  • [4] Macro and microscopic growth interface study of CdZnTe ingots by THM technique
    Roy, U. N.
    Weiler, S.
    Stein, J.
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XII, 2010, 7805
  • [5] Growth interface study of CdTeSe crystals grown by the THM technique
    Roy, Utpal N.
    Camarda, Giuseppe S.
    Cui, Yonggang
    James, Ralph B.
    JOURNAL OF CRYSTAL GROWTH, 2023, 616
  • [6] Influence of rotating magnetic fields on THM growth of CdZnTe crystals under microgravity and ground conditions
    Stelian, Carmen
    Duffar, Thierry
    JOURNAL OF CRYSTAL GROWTH, 2015, 429 : 19 - 26
  • [7] Growth interface of In-doped CdMnTe from Te solution with vertical Bridgman method under ACRT technique
    Du Yuan-yuan
    Jie Wan-qi
    Zheng Xin
    Wang Tao
    Bai Xu-xu
    Yu Hui
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2012, 22 : S143 - S147
  • [8] Morphological change of semiconductor growth interface from solution in a magnetic field
    Inatomi, Y.
    Takada, A.
    Kuribayashi, K.
    Journal of Crystal Growth, 1999, 198-199 (pt 1): : 176 - 181
  • [9] Morphological change of semiconductor growth interface from solution in a magnetic field
    Inatomi, Y
    Takada, A
    Kuribayashi, K
    JOURNAL OF CRYSTAL GROWTH, 1999, 198 : 176 - 181
  • [10] Plant growth under static magnetic field influence
    Racuciu, M.
    Creanga, D.
    Horga, I.
    ROMANIAN JOURNAL OF PHYSICS, 2008, 53 (1-2): : 353 - 359
12345