Electromigration threshold in copper interconnects

被引：99
|
作者：
Wang, PC [1 ]
Filippi, RG [1 ]
机构：
[1] IBM Corp, Microelect Div, Hopewell Junction, NY 12533 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 23期
关键词：
D O I：
10.1063/1.1371251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295-400 degreesC. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. 47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL)(th), at a certain temperature. The resulting (jL)(th) value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400 degreesC. (C) 2001 American Institute of Physics.
引用
收藏
页码：3598 / 3600
页数：3
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