Current-induced terahertz oscillations in plasmonic crystal

被引:49
|
作者
Kachorovskii, V. Yu. [1 ,2 ]
Shur, M. S. [1 ]
机构
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会; 美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; CURRENT INSTABILITY; MECHANISM; MODES; FLUID;
D O I
10.1063/1.4726273
中图分类号
O59 [应用物理学];
学科分类号
摘要
We discuss a possible mechanism of the current instability in multi-gated structures with periodic modulation of the electron density in the device channel. In such structures, the plasma wave velocity is periodically modulated as well, and the stationary electric current may become unstable with respect to generation of the plasma oscillations. In the simplest model of periodically alternating stripes of the electron density with plasma wave velocities s(a) and s(b), respectively (s(a) < s(b)), the instability occurs when the electron drift velocity approaches s(a). For typical parameters, the plasma oscillation frequency can be tuned to be in the terahertz range of frequencies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726273]
引用
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页数:4
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