Phonon-assisted carrier relaxation in self-assembled quantum dots

被引：0

作者：

Ignatiev, IV ^{[1
]}

Davydov, VG ^{[1
]}

Kozin, IE ^{[1
]}

Lee, JS ^{[1
]}

Nair, SV ^{[1
]}

Ren, HW ^{[1
]}

Sugou, S ^{[1
]}

Masumoto, Y ^{[1
]}

机构：

[1] JST, ERATO, Masumoto Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier relaxation dynamics in the InP and In GaAs quantum dots is studied by the technique of the electric field induced nonradiative losses and by the PL kinetics measurements. Clear evidences of efficient single-step relaxation with emission of the acoustic phonons are found. The findings give new and important insights into the interaction of the confined electron-hole pairs with the phonon subsystem.

引用

页码：1127 / 1128

页数：2

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