A 70-dB, 3.1-10.6-GHz CMOS Amplifier Low-Power 90 nm CMOS

被引：0

作者：

Tuan Anh Vu ^{[1
]}

Sudalaiyandi, Shanthi ^{[1
]}

Hjortland, Hakon A. ^{[1
]}

Naess, Oivind ^{[1
]}

Lande, Tor Sverre ^{[1
]}

Hamran, Svein Erik ^{[1
]}

机构：

[1] Univ Oslo, Dept Informat, N-0316 Oslo, Norway

来源：

2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2011年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a novel high-gain CMOS amplifier suitable for uItra-wideband (UWB) applications. The proposed amplifier achieves a -3 dB bandwidth covering the entire FCC UWB spectrum from 3.1 GHz to 10.6 GHz with a very high gain of approximately 70 dB. The amplifier is an area-efficient, single-inductor solution designed for TSMC 90 nm CMOS low-power process while consuming 25.1 mW from 1.2 V supply voltage.

引用

页数：4

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