Electro-photo modulation of the fermi level in WSe2/graphene van der Waals heterojunction

被引：3

作者：

Sun, Honghui ^{[1
,2
]}

Yang, Hang ^{[3
]}

Fang, Liang ^{[1
,2
]}

Zhang, Jiangwei ^{[1
,2
]}

Wang, Zhiyuan ^{[1
,2
]}

Jiang, Tian ^{[1
,4
]}

机构：

[1] Natl Univ Def Technol, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

[2] Natl Univ Def Technol, Coll Comp, Changsha 410073, Hunan, Peoples R China

[3] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

[4] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2017年 / 88卷

基金：

中国国家自然科学基金;

关键词：

WSe2/graphene heterojunction; Rectification; Photodetection; Photovoltaic; Fermi level; Current peak; PHOTOCURRENT GENERATION; TUNGSTEN DISELENIDE; BROAD-BAND; WSE2; GRAPHENE; MOS2; HETEROSTRUCTURES; PHOTODETECTORS; TRANSISTORS; TRANSPORT;

D O I：

10.1016/j.physe.2016.11.026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report an electro-photo double modulation of the fermi level in a WSe2/graphene heterojunction. The heterojunction exhibits high I-ON/I-OFF ratio (similar to 10(3)) in transfer characteristic in dark and distinct rectification behavior in output characteristic under light illumination, respectively. Time-dependent photoresponse reveals that the heterojunction has a considerable potential in the application of photodetection. Interestingly, an exotic current peak is observed in transfer characteristic under light illumination. This novel behavior is attributed to the tunable fermi level at the WSe2/graphene heterojunction by electro-photo double modulation. The results may be helpful to develop tunable photovoltaic optoelectronics based on under Waals heterojunctions.

引用

页码：279 / 283

页数：5

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