First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 x 2) surface

被引:0
|
作者
Akaishi, Akira [1 ]
Funatsuki, Kenta [1 ]
Ohtake, Akihiro [2 ]
Nakamura, Jun [1 ]
机构
[1] UEC Tokyo, Dept Engn Sci, Chofu, Tokyo 1828585, Japan
[2] NIMS, Tsukuba, Ibaraki 3050044, Japan
关键词
RECONSTRUCTED SURFACES; ENERGETICS; MODEL; PSEUDOPOTENTIALS; GAAS;
D O I
10.7567/JJAP.55.08NB21
中图分类号
O59 [应用物理学];
学科分类号
摘要
Various atomic arrangements of the Mn-induced GaAs(001) surface, consisting of one Ga-As dimer and one Mn atom in the (2 x 2) unit, have been investigated by first-principles calculations. The most stable arrangement is reasonable in view of the classical electrostatic theory. It has been revealed that the topmost Ga-As dimers tend to be aligned along the [110] direction, while they are less ordered along the [110] direction. These anisotropic orderings, that is, anisotropic interactions, imply that the Mn atom, which is located between the Ga-As dimers, enhances the local electrostatic interaction between the dimers along the [110] direction, as a result of the dielectric anisotropy at the surface. (C) 2016 The Japan Society of Applied Physics.
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页数:4
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