Particle removal challenges and solutions in semiconductor fabrication CMP processes

被引:0
|
作者
Andreas, Michael T. [1 ]
机构
[1] Micron Technol Inc, Fab 4 Proc Dev, Boise, ID 83707 USA
关键词
brush cleaning; chemical-mechanical polishing; CMP; PVA; slurry; wafer cleaning;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical mechanical planarization (CMP) is an important semiconductor process used in the fabrication of many high-density integrated circuit (IC) components (memory, logic, signal processing, etc.). In CMP, semiconductor wafers are processed in contact with a polymeric polishing material and inorganic abrasive slurry in the presence of other chemical additives. Effective post-CMP particle cleanup is critical to achieving good product yields. Here, several examples of real defects and process solutions for each defect are reviewed. These defects include heavy particle contamination, isolated particle contamination, radial slurry patterns, annular slurry patterns, organic debris, subsurface debris, microbial particles, water marks and wafer backside contamination.
引用
收藏
页码:243 / 254
页数:12
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