Illumination effect on switching performance of a triangular-barrier resonant-tunnelling diode

被引：44
|
作者：
Guo, DF [1 ]
机构：
[1] Chinese AF Acad, Dept Elect Engn, Kaohsiung, Taiwan
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 2001年 / 148卷 / 02期
关键词：
D O I：
10.1049/ip-opt:20010068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The illumination effect on switching performance is presented for a triangular-barrier resonant-tunnelling diode (TBRDT). A delta -doped quantum well is inserted into the centre of the TBRTD. Owing to the resonant tunnelling through the miniband in the quantum well, an N-shaped negative-differential-resistance phenomenon is observed in the current-voltage characteristics. The device shows a flexible optical function related to the cap-layer conductivity and a potential barrier height which can be changed by incident light.
引用
收藏
页码：121 / 123
页数：3
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