Optically controlled S- and N-shaped negative differential resistances by resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

被引:0
|
作者
Sakata, H
Utaka, K
Matsushima, Y
机构
[1] KDD RandD Laboratories, Kamifukuoka-shi, Saitama 356
[2] School of Science and Engineering, WASEDA University, Shinjyuku-ku, Tokyo 169
关键词
D O I
10.1007/BF00943629
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report novel optoelectronic functions in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). We successfully observed optically controlled S- and N-shaped negative differential resistances (NDRs) simultaneously in a single device. Different types of optoelectronic bistabilities originating from S- and N-shaped NDRs were obtained by changing the input light power. We also obtained the differential gain characteristics and latch characteristics from S-shaped NDR by changing the bias voltages. These characteristics with their different behaviours make it possible to realize novel optoelectronic switching.
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页码:591 / 597
页数:7
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