Interfacial defects in thin refractory metal films imaged by low-energy electron microscopy

被引：0

作者：

Swiech, W ^{[1
]}

Mundschau, M ^{[1
]}

Flynn, CP ^{[1
]}

机构：

[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期

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D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-energy electron microscopy is employed to image defects at buried interfaces through the strains they cause at the front surface. The interfacial defects studied here occur in high quality films of Mo(110) grown by molecular beam epitaxy on Al2O3(11(2) over bar 0). The defects include steps and inclusions on the original sapphire surface and interfacial dislocations created where epitaxial strain causes slip. (C) 1999 American Institute of Physics. [S0003-6951(99)02818-1].

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页码：2626 / 2628

页数：3

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