Temperature dependence of drain conductance in ion implanted GaN/AlGaN/GaN HEMTs

Temperature dependence of drain conductance in ion implanted GaN/AlGaN/GaN HEMTs grown on Si and Sapphire substrates were investigated. Drain conductances, g(d) in HEMTs grown on Si substrate were 3 times smaller than HEMTs grown on Sapphire substrate. The different values of drain conductances, gd may be explained by a more efficient heat sinking via the Si substrate. We also estimated temperature coefficient, a related to thermal reliability. Temperature coefficient, a was improved in ion implanted GaN/AlGaN/GaN HEMTs grown on Si substrate than on sapphire substrate. We demonstrate that Si has been shown to be a viable alternative substrate for low-cost high-power operating GaN-based electron devices.