Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films

被引:6
|
作者
Menon, PM
Edwards, A
Feigerle, CS
Shaw, RW [1 ]
Coffey, DW
Heatherly, L
Clausing, RE
Robinson, L
Glasgow, DC
机构
[1] Oak Ridge Natl Lab, Div Chem & Analyt Sci, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA
[3] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
chemical vapor deposited diamond films; filament metal contamination; Raman spectra;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical vapor deposited diamond films grown in a hot filament reactor using three filament metals (tungsten, tantalum, and rhenium) have been analyzed for their metal impurity content. This is the first report wherein all three common CVD filament metals have been examined and a single technique used for diamond film analysis. Tungsten carbide filaments yielded the lowest impurity level (few ppm by mass), whereas rhenium yielded the highest (parts per thousand). The effects of filament temperature and addition of ammonia or oxygen to the reactant gas mixture were examined. A correlation was observed between the metal content of the product films and their quality, as judged using Raman spectroscopy. Films with the highest metal content yielded Raman spectra showing the lowest fluorescence background, the smallest sp(2) carbon contribution, and the narrowest 1332 cm(-1) diamond line. (C) 1999 Elsevier Science S.A.
引用
收藏
页码:101 / 109
页数:9
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