Preparation of ohmic n-type cubic boron nitride contacts

被引：6

作者：

Wang, CX ^{[1
]}

Liu, HW ^{[1
]}

Li, X ^{[1
]}

Zhang, TC ^{[1
]}

Han, YH ^{[1
]}

Luo, JF ^{[1
]}

Shen, CX ^{[1
]}

Gao, CX ^{[1
]}

Zou, GT ^{[1
]}

机构：

[1] Jilin Univ, Natl Lab Superhard Mat, Changchun 130023, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 44期

关键词：

D O I：

10.1088/0953-8984/14/44/405

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ohmic electrodes in the form of n-type (Si-doped) cubic boron nitride (c-BN) bulk crystals were fabricated by utilizing a covering technique, depositing Ti(10 nm)/Mo/(20 nm)/Pt-Au(200 nm) ohmic contact metal on both the sides of the c-BN substrate. The size of the specimen electrode was 100 x 100 mum(2) on one side and 300 x 300 mum(2) on the other side. Measurements on the specimen were made using a specially made device. Linear current-voltage characteristics were obtained. It is considered that the contact between the Ti- and Si-doped c-BN was ohmic.

引用

页码：10937 / 10940

页数：4

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