Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy

被引：63

作者：

Zhou, H. L. ^{[1
]}

Hoang, T. B. ^{[1
]}

Dheeraj, D. L. ^{[1
]}

van Helvoort, A. T. J. ^{[2
]}

Liu, L. ^{[3
]}

Harmand, J. C. ^{[3
]}

Fimland, B. O. ^{[1
]}

Weman, H. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

[2] Norwegian Univ Sci & Technol, Dept Phys, NO-7491 Trondheim, Norway

[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 41期

关键词：

FIELD-EFFECT TRANSISTORS; HETEROSTRUCTURES;

D O I：

10.1088/0957-4484/20/41/415701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the growth of GaAs/AlGaAs core-shell nanowires (NWs) on GaAs(111)B substrates by Au-assisted molecular beam epitaxy. Electron microscopy shows the formation of a wurtzite AlGaAs shell structure both in the radial and the axial directions outside a wurtzite GaAs core. With higher Al content, a lower axial and a higher radial growth rate of the AlGaAs shell were observed. Room temperature and low temperature (4.4 K) micro-photoluminescence measurements show a much higher radiative efficiency from the GaAs core after the NW is overgrown with a radial AlGaAs shell.

引用

页数：7

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