K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC

被引：4

作者：

Okamura, W ^{[1
]}

Yang, LW ^{[1
]}

Gutierrez-Aitken, A ^{[1
]}

Kaneshiro, E ^{[1
]}

Lester, J ^{[1
]}

Sawdai, D ^{[1
]}

Grossman, PC ^{[1
]}

Kobayashi, K ^{[1
]}

Yen, HC ^{[1
]}

Oki, A ^{[1
]}

Chin, P ^{[1
]}

Block, T ^{[1
]}

机构：

[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA

来源：

GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000 | 2000年

关键词：

D O I：

10.1109/GAAS.2000.906326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a DHBT power cell with 76% PAE at 21 GHz, and the first DHBT MMIC PA operating at 22 - 24 GHz. The MMIC amplifier combines four power cells where each power cell is made up of two 1.5x30 mum(2) emitter fingers, yielding a total emitter area of 360 mum(2). A practical design approach is employed to yield a single-ended, single stage power amplifier which achieved a record high output power density per chip area of 0.36 - 0.38 W/mm(2) at 23 GHz.

引用

页码：219 / 222

页数：4

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