Effect of remote inductively coupled plasma (ICP) on the electron energy probability function of an in-tandem main ICP

被引:9
|
作者
Lee, Jaewon [1 ]
Kim, Kyung-Hyun [1 ]
Chung, Chin-Wook [1 ]
机构
[1] Hanyang Univ, Dept Elect Engn, 222 Wangsimni Ro Seongdonggu, Seoul 04763, South Korea
关键词
SILICON DIOXIDE; NITRIDE; DEPOSITION; FILMS;
D O I
10.1063/1.4975077
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The remote plasma has been generally used as the auxiliary plasma source for indirect plasma processes such as cleaning or ashing. When tandem plasma sources that contain main and remote plasma sources are discharged, the main plasma is affected by the remote plasma and vice versa. Charged particles can move between two chambers due to the potential difference between the two plasmas. For this reason, the electron energy possibility function of the main plasma can be controlled by adjusting the remote plasma state. In our study, low energy electrons in the main plasma are effectively heated with varying remote plasma powers, and high energy electrons which overcome potential differences between two plasmas-are exchanged with no remarkable change in the plasma density and the effective electron temperature. Published by AIP Publishing.
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页数:5
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