Giant perpendicular exchange bias with antiferromagnetic MnN

被引:35
|
作者
Zilske, P. [1 ]
Graulich, D. [1 ]
Dunz, M. [1 ]
Meinert, M. [1 ]
机构
[1] Univ Bielefeld, Dept Phys, Ctr Spinelect Mat & Devices, D-33501 Bielefeld, Germany
关键词
CRYSTAL-STRUCTURE; SPIN ELECTRONICS; ANISOTROPY; DIFFRACTION; PHASE; FILMS;
D O I
10.1063/1.4983089
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated an out-of-plane exchange bias system that is based on the antiferromagnet MnN. Polycrystalline, highly textured film stacks of Ta/MnN/CoFeB/MgO/Ta were grown on SiOx by (reactive) magnetron sputtering and studied by x-ray diffraction and Kerr magnetometry. Nontrivial modifications of the exchange bias and the perpendicular magnetic anisotropy were observed as functions of both film thicknesses and field cooling temperatures. In optimized film stacks, a giant perpendicular exchange bias of 3600Oe and a coercive field of 350 Oe were observed at room temperature. The effective interfacial exchange energy is estimated to be J(eff) = 0.24 mJ/m(2) and the effective uniaxial anisotropy constant of the antiferromagnet is K-eff = 24 kJ/m(3). The maximum effective perpendicular anisotropy field of the CoFeB layer is H-ani = 3400 Oe. These values are larger than any previously reported values. These results possibly open a route to magnetically stable, exchange biased perpendicularly magnetized spin valves. Published by AIP Publishing.
引用
收藏
页数:4
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