Theoretical analysis of the minority carrier lifetime in a multicrystalline wafer with spatially varying defect distribution

被引：0
|
作者：
Sopori, B [1 ]
Chen, W [1 ]
Ravindra, NM [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II | 1998年 / 510卷
关键词：
D O I：
10.1557/PROC-510-373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multicrystalline Si (mc-Si) wafers, used for the commercial solar cell fabrication, have spatial nonuniformities in the material properties that cause strong variations in the minority carrier lifetime, tau. We present the results of two-dimensional modeling to show carrier generation, recombination and transport in such a material. These results are used to infer measurement conditions that can yield meaningful spatially weighted average value of tau.
引用
收藏
页码：373 / 378
页数：6
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