NONDESTRUCTIVE METHOD FOR MEASURING THE SPATIAL-DISTRIBUTION OF MINORITY-CARRIER LIFETIME IN SILICON WAFER

被引：31
|
作者：
MADA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 11期
关键词：
D O I：
10.1143/JJAP.18.2171
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2171 / 2172
页数：2
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