Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels

被引：2
|
作者：
Fang, Hsin-Kai [1 ]
Chang-Liao, Kuei-Shu [1 ]
Huang, Chien-Pang [1 ]
Lee, Wei-Zhi [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
来源：
VACUUM | 2017年 / 140卷
关键词：
Ge buried channel; Poly-Si; Nanowire; Charge-trapping flash memory device; ERASING SPEEDS;
D O I：
10.1016/j.vacuum.2016.12.042
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Operation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory devices with a SiGe and a Ge buried channel are studied and compared in this work. The poly-Si NW devices with a Ge buried channel show faster programming and erasing speeds as compared to those with a SiGe one due to a lower energy barrier in tunneling layer with more Ge composition. The retention and endurance characteristics of devices with a Ge buried channel are similar to those with a SiGe one. Ge buried channel is promising to CI' flash device for 3D nonvolatile memory applications. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：53 / 57
页数：5
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