Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals

被引：68
|
作者：
Labilloy, D
Benisty, H
Weisbuch, C
Krauss, TF
Houdre, R
Oesterle, U
机构：
[1] UNIV GLASGOW,DEPT ELECT & ELECT ENGN,GLASGOW G12 8LT,LANARK,SCOTLAND
[2] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,CH-1015 LAUSANNE,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 06期
关键词：
D O I：
10.1063/1.119630
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. (C) 1997 American Institute of Physics.
引用
收藏
页码：738 / 740
页数：3
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