Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

被引：0
|
作者：
Edes, Z. [1 ,2 ]
Krapek, V. [1 ]
Sikola, T. [2 ]
机构：
[1] Brno Univ Technol, Cent European Inst Technol, Tech 10, CZ-61600 Brno, Czech Republic
[2] Brno Univ Technol, Inst Phys, Tech 2, CZ-61669 Brno, Czech Republic
来源：
ACTA PHYSICA POLONICA A | 2016年 / 129卷 / 1A期
关键词：
SPONTANEOUS EMISSION;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter's position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.
引用
收藏
页码：A70 / A72
页数：3
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