Effect of ICP Etching on InP-based Multiple Quantum Wells Microring Lasers

被引：0
|
作者：
Xie Sheng [1 ]
Chen Zhiming [2 ]
Yu Xin [1 ]
Zhang Shilin [1 ]
Li Xianjie [3 ]
Chen Yan [1 ]
Guo Weilian [1 ]
Qi Lifang [2 ]
Mao Luhong [1 ]
Yu Jinlong [1 ]
机构：
[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
[2] Lib Hebei North Univ, Zhangjiakou 075000, Peoples R China
[3] 13 Inst China Elect Technol Grp Corp, Shijiazhuang 050051, Peoples R China
来源：
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2011年
基金：
中国国家自然科学基金;
关键词：
Dry etching; inductively coupled plasma; indium phosphide; waveguide; microring laser;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl-2/CH4/Ar recipe have better surface and sidewall quality than that of the Cl-2/BCl3 chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl-2/CH4/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.
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页数：2
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