InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

被引：3
|
作者：
Sprengel, Stephan [1 ]
Veerabathran, Ganpath Kumar [1 ]
Federer, Florian [1 ]
Andrejew, Alexander [2 ]
Amann, Markus-Christian [1 ]
机构：
[1] Tech Univ Munich, D-80333 Munich, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 06期
关键词：
Type-II quantum well; VCSEL; surface emitting; W-shaped quantum well; laser; MU-M; GAP; PARAMETERS; SUBSTRATE;
D O I：
10.1109/JSTQE.2015.2424834
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP-based type-II quantum wells are a promising concept for long wavelength lasers beyond 2 mu m. In this paper, recently developed vertical-cavity surface-emitting lasers for 2.5 mu m with type-II quantum wells are introduced and their performance is discussed. These lasers demonstrate single-mode CW operation with an output power up to 400 mu W and side-mode suppression ratio of 30 dB. The maximum temperature for CW operation is 10 degrees C. In order to further analyze their performance, a phenomenological model for the temperature dependences of threshold current densities is presented. Based on this model influence of heat sink temperature, current broadening and self-heating is quantified and conclusions are drawn for an improved design.
引用
收藏
页码：453 / 461
页数：9
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