Carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors (vol 73, pg 529, 1998)

被引：1
|
作者：
Nagy, G [1 ]
Levy, M
Scarmozzino, R
Osgood, RM
Dai, H
Smalley, RE
Michaels, CA
Sevy, ET
Flynn, GW
McLane, GF
机构：
[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA
[2] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77251 USA
[3] Columbia Univ, Dept Chem, New York, NY 10027 USA
[4] USA, Res Lab, Ft Monmouth, NJ 07703 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 10期
关键词：
D O I：
10.1063/1.122171
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1448 / 1448
页数：1
相关论文
共 3 条
  • [1] Carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors
    Nagy, G
    Levy, M
    Scarmozzino, R
    Osgood, RM
    Dai, H
    Smalley, RE
    Michaels, CA
    Flynn, GW
    McLane, GF
    APPLIED PHYSICS LETTERS, 1998, 73 (04) : 529 - 531
  • [2] Carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors
    Nagy, G.
    Levy, M.
    Scarmozzino, R.
    Osgood, R.M. Jr.
    Dai, H.
    Smalley, R.E.
    Michaels, C.A.
    Flynn, G.W.
    McLane, G.F.
    Applied Physics Letters, 1998, 73 (04):
  • [3] Erratum: 'carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors' [Appl. Phys. Lett. 73, 529 (1998)]
    Nagy, G.
    Levy, M.
    Scarmozzino, R.
    Osgood, R.M. Jr.
    Dai, H.
    Smalley, R.E.
    Michaels, C.A.
    Sevy, E.T.
    Flynn, G.W.
    McLane, G.F.
    Applied Physics Letters, 1998, 73 (10):
1