A low phase noise 52-GHz push-push VCO in 0.18-μn bulk CMOS technologies

被引：0

作者：

Cho, YH ^{[1
]}

Tsai, MD ^{[1
]}

Chang, HY ^{[1
]}

Chang, CC ^{[1
]}

Wang, H ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2005年

关键词：

CMOS; thin-film microstrip line; VCO;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A V-Band fully integrated complementary push-push VCO is first presented in 0.18-mu m bulk CMOS technologies. Thin-film microstrip (TFMS) lines are utilized in the circuit to reduce the conductive substrate effect. In order to lower the phase noise, complementary cross-coupled pairs are used to generate negative conductance. The measured phase noise at 1-MHz offset is about -97 dBc/Hz at 52.6 GHz and is -104 dBe/Hz at 26.3 GHz. To the author's best knowledge, this complementary CMOS VCO achieves the lowest phase noise in comparison with other VCOs using standard bulk CMOS processes in V-Band.

引用

页码：131 / 134

页数：4

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