A 20 GHz Low Phase Noise Push-Push VCO in InGaP GaAs HBT Technology

被引：0

作者：

Zhang, Jincan ^{[1
]}

Liu, Bo ^{[1
]}

Zhang, Leiming ^{[1
]}

Sun, Ligong ^{[1
]}

Zhang, Yuming ^{[2
]}

Lu, Hongliang ^{[2
]}

Zhang, Yimen ^{[2
]}

机构：

[1] Henan Univ Sci & Technol, Luoyang, Peoples R China

[2] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian, Shaanxi, Peoples R China

来源：

MICROWAVE JOURNAL | 2018年 / 61卷 / 05期

关键词：

COLPITTS; EXTRACTION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 20 GHz low phase noise voltage-controlled oscillator (VCO) uses InGaP GaAs heterojunction bipolar transistor (HBT) technology. A push-push negative g(m) VCO configuration taking its output signal from a capacitive base common node of the cross-coupled transistors is employed to achieve a high oscillation frequency and low phase noise. The VCO oscillates from 19.44 to 20.04 GHz. Measured phase noise is - 111.8 dBc/Hz at 1 MHz offset from a 19.78 GHz carrier. It consumes 31 mW from a 5 V supply and occupies an area of 0.514 mm x 0.622 mm. Its figure of merit is - 182.8 dBc/Hz.

引用

页码：102 / 114

页数：13

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