Silicon-Based Photodetector for Infrared Telecommunication Applications

被引：20
|
作者：
Huang, Yu-Chieh
Parimi, Vivek
Chang, Wei-Che
Syu, Hong-Jhang
Su, Zih-Chun
Lin, Ching-Fuh [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optotelect, Taipei 106319, Taiwan
来源：
IEEE PHOTONICS JOURNAL | 2021年 / 13卷 / 02期
关键词：
Photodetectors; Annealing; Resistance; Silicon; Schottky barriers; Silicides; Platinum alloys; optical communication; photodetectors; photodiodes; silicon photonics; semiconductor device manufacture; DEPENDENCE;
D O I：
10.1109/JPHOT.2021.3064068
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the design and fabrication of a Cu/p-Si/Pt Schottky photodetector with a simple structure is investigated. The mechanism of electron flow is explained using internal photoemission theory, which is further applied to make the fabricated devices reach a high responsivity of 0.542 mA/W at 0-V bias. The investigation revealed that the rapid thermal annealing process could significantly influence the device characteristics. Variations in Schottky barrier height and series resistance of the photodetectors were also analyzed and correlated with the device responsivity. With proper conditions to improve the Pt/Si ohmic contact, the device performance can be enhanced.
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页数：8
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