Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources

Epitaxial AlxGa1-xSb and AlxGa1-xAsySb1-y layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic vapor phase epitaxy using tertiarybutylarsine as the arsenic precursor and conventional trimethyl compounds of the other elements. AlxGa1-xSb was grown through the whole composition range and AlxGa1-xAsySb1-y layers lattice matched to GaSb with x = 0.36 to x = 1. Narrow low-temperature photoluminescence and X-ray diffraction peaks of the epilayers indicate high quality of both materials. It was found that the arsenic distribution coefficient in the growth of AlGaAsSb increased almost linearly with the V/III ratio in the range studied. The net hole concentration of unintentionally doped AlGaAsSb was found to be significantly lower compared to AlGaSb with similar aluminum concentration.