Molecular dynamics simulations of GaAs-crystal surface modifications during nanoindentation with AFM tip

被引：2

作者：

Prasolov, N. D. ^{[1
,2
]}

Brunkov, P. N. ^{[1
,2
]}

Gutkin, A. A. ^{[2
]}

机构：

[1] ITMO Univ, St Petersburg 197101, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

来源：

4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1088/1742-6596/917/9/092018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nanoindentation model of atomically flat surface of GaAs with the AFM tip was developed on the base of Molecular Dynamics. It was found that as a temperature rises above 100 K the nanoindention results in increase of number of atoms with higher number of neighbours, i.e. point defect appears in the topmost atomic layers of GaAs. The observed results can be explained with the kinetic concept of the mechanism of fracture of solid state where the generation of native point defects caused by the fluctuation of thermal energy and the external stress results in enhancement of the defect generation rate.

引用

页数：4

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