Photoelectric properties of isotype heterojunctions n-InSe⟨REE⟩/n-CuInSe2 in visible and near IR-region

被引：0
|
作者：
Abdinov, AS [1 ]
Babayeva, RF [1 ]
Ismayilov, RM [1 ]
Eyvazova, GH [1 ]
机构：
[1] Baku State Univ, Baku 370148, Azerbaijan
来源：
18th International Conference on Photoelectronics and Night Vision Devices | 2005年 / 5834卷
关键词：
D O I：
10.1117/12.628683
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By the method of landing to optical contact isotype n-InSe < REE >/n-CuInSe2 heterojunctions with percentage of introduced impurity N-REE = 0; 10(-5); 10(-4); 10(-3); 10(-2) and 10(-1) at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e. m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on N-REE have been found out and mechanisms for their explanations have been offered.
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页码：260 / 263
页数：4
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