Microstructure and dielectric properties of Nd-doped bismuth titanate

被引：5

作者：

Zang, Yongyuan ^{[1
]}

Xie, Dan ^{[1
]}

Xiao, Yehui ^{[1
]}

Ruan, Yong ^{[1
]}

Ren, Tianling ^{[1
]}

Liu, Litian ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2008年 / 98卷

基金：

中国国家自然科学基金;

关键词：

ferroelectric; BNdT; sol-gel; dielectric properties;

D O I：

10.1080/10584580802092464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

B3.15Nd0.85Ti3O12 (BNdT) thin films were prepared on Pt(100)/Ti/SiO2/Si(100) substrate by sol-gel process. Perovskite crystalline was observed in the thin films achieved, and the grain size of the thin film was about 200 nm in diameter with sharp and clear boundaries between different films and the Pt electrodes. Well-saturated polarization-voltage (PV) switching curves were examined in the BNdT thin films. The remnant polarization and the coercive field of the BNdT thin films annealed at 750 degrees C were 43 mu C/cm(2) and 66 kv/cm at an applied voltage of 8v, respectively. The dielectric constant and the dissipation factor were 583 and 0.07 respectively, measured at 100 KHz.

引用

页码：97 / 104

页数：8

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