Oxide Thin Film Transistor Technology: Capturing Device-Circuit Interactions

被引：0

作者：

Nathan, Arokia ^{[1
,2
]}

Lee, Sungsik ^{[1
]}

Jeon, Sanghun ^{[3
]}

Chaji, Reza ^{[2
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[2] IGNIS Innovat Inc, Waterloo, ON N2V 2C5, Canada

[3] Korea Univ, Dept Display & Semicond Phys, Seoul 339700, South Korea

来源：

2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the current status of oxide semiconductor technology for applications ranging from interactive displays to imaging systems with a strong focus on device-circuit interaction to compensate for material weaknesses and issues related to non-uniformity, instability, and persistent photoconductivity.

引用

页数：4

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