Oxide Thin Film Transistor Technology: Capturing Device-Circuit Interactions

被引：0
|
作者：
Nathan, Arokia [1 ,2 ]
Lee, Sungsik [1 ]
Jeon, Sanghun [3 ]
Chaji, Reza [2 ]
机构：
[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England
[2] IGNIS Innovat Inc, Waterloo, ON N2V 2C5, Canada
[3] Korea Univ, Dept Display & Semicond Phys, Seoul 339700, South Korea
来源：
2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2015年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the current status of oxide semiconductor technology for applications ranging from interactive displays to imaging systems with a strong focus on device-circuit interaction to compensate for material weaknesses and issues related to non-uniformity, instability, and persistent photoconductivity.
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页数：4
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