Ultrathin High -K Gate Dielectric Films On Strained-Si/SiGe Heterolayers

被引：0
|
作者：
Bera, M. K. [1 ]
Mahata, C. [2 ]
Maiti, C. K. [2 ]
机构：
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India
来源：
IETE JOURNAL OF RESEARCH | 2007年 / 53卷 / 03期
关键词：
D O I：
10.1080/03772063.2007.10876138
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[ABST].
引用
收藏
页码：237 / 251
页数：15
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