Resonance structure and stability of intense terahertz-driven semiconductor Wannier-Stark ladder

被引：1

作者：

Karasawa, T. ^{[1
]}

Amano, T. ^{[1
]}

Kukuu, A. ^{[1
]}

Maeshima, N. ^{[1
]}

Hino, K. ^{[1
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Doctoral Program Frontier Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1 | 2011年 / 8卷 / 01期

关键词：

semiconductors; quantum wells; optical properties; SUPERLATTICES; TRANSPORT; TIME;

D O I：

10.1002/pssc.201000650

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a theoretical study of an electronic state in the semiconductor Wannier-Stark ladder (WSL) driven by an intense THz laser. Numerical calculations based on the R-matrix Floquet theory have revealed that the dynamic localization (DL) is unstable against the Fano resonance-like interminiband decay mechanism caused by the THz-mediated coupling, termed here the dynamic Fano resonance (DFR). The obtained result is sharply contrasted with the conventional understanding without the introduction of DFR that the degree of stability of the DL would be comparable to or more than that of the WSL with no THz laser. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：217 / 220

页数：4

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