Low Resistive and Uniform CoSi2 Formation with Ti Capping Layer

被引：0

作者：

Lee, Jaesang ^{[1
]}

Kim, Hyungchul ^{[2
]}

Woo, Sanghyun ^{[2
]}

Lee, Hyerin ^{[2
]}

Jeon, Hyeongtag ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

cobalt silicide; metal organic chemical vapor deposition (MOCVD); Ti capping layer; CCTBA;

D O I：

10.1063/1.3666318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have examined the interface morphologies CoSi2 layer after Co films deposition with and without Ti capping layer followed by RTA. In the case of Co film without Ti capping layer, the interface between CoSi2 and Si substrate exhibited significantly rough and wavy morphology. On the other hand, CoSi2 layer with Ti capping layer, showed a relatively smooth and uniform surface and interface morphologies. Therefore, the surface and interface roughness of CoSi2 layer were improved by Ti capping layer. This smooth CoSi2 layer can improve the contact resistance and the thermal stability for applications in ultra-large-scale integration (ULSI) devices.

引用

页数：2

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