Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications

被引：10

作者：

Seo, Minha ^{[1
,2
]}

Kim, Seong Keun ^{[1
,2
]}

Min, Yo-Sep ^{[3
]}

Hwang, Cheol Seong ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151742, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[3] Konkuk Univ, Dept Chem Engn, Seoul 143701, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 46期

基金：

新加坡国家研究基金会;

关键词：

THIN-FILMS; HAFNIUM OXIDE; RU ELECTRODE; ZIRCONIUM; GROWTH; 1ST-PRINCIPLES; DIELECTRICS; NUCLEATION; OZONE; H2O;

D O I：

10.1039/c1jm11763g

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

HfO2 films were grown by atomic layer deposition (ALD) using a new heteroleptic hafnium precursor, tert-butoxytris(ethylmethylamido)hafnium (BTEMAH), and ozone. This BTEMAH precursor achieved a very high growth rate and retained excellent thermal stability in electrical performance due to the high film density of the HfO2 films. Additionally, the structural compatibility between the specific planes of tetragonal HfO2 and rutile TiO2 achieved a high dielectric constant (similar to 29) for HfO2 films grown on a rutile TiO2 film. It is demonstrated that this BTEMAH is a very promising precursor for the growth of HfO2 films for both the applications of a gate oxide and a capacitor dielectric.

引用

页码：18497 / 18502

页数：6

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