Semiconductor Diode Lasers for Terahertz Technology

被引：8
|
作者：
Brenner, Carsten [1 ]
Friedrich, Claus-Stefan [1 ]
Hofmann, Martin Rudolf [1 ]
机构：
[1] Ruhr Univ Bochum, Bochum, Germany
来源：
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2011年 / 32卷 / 11期
关键词：
Semiconductor diode lasers; External cavity lasers; THz generation; Photoconducting antennas; Femtosecond lasers; Photomixing; Quasi time domain spectroscopy; THz spectroscopy; TEMPERATURE-GROWN GAAS; TIME-DOMAIN SPECTROSCOPY; QUANTUM-CASCADE LASERS; CONTINUOUS-WAVE; FEMTOSECOND PULSES; DUAL-MODE; RADIATION; GENERATION; EMISSION; COMPACT;
D O I：
10.1007/s10762-011-9815-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We discuss different concepts for generating terahertz (THz) radiation with semiconductor diode lasers. Photomixing enables the generation of continuous wave THz radiation by difference frequency generation of two lasers or of two-colour lasers. Pulsed THz radiation for time domain THz spectroscopy is generated with modelocked diode laser systems including amplification and chirp compression. Finally, we analyse the concept of quasi time domain spectroscopy based on broadband diode laser systems.
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页码：1253 / 1266
页数：14
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