Removal of scratch on the surface of MgO single crystal substrate in chemical mechanical polishing process

被引：18

作者：

Kang, R. K. ^{[1
]}

Wang, K. ^{[1
]}

Wang, J. ^{[2
]}

Guo, D. M. ^{[1
]}

机构：

[1] Dalian Univ Technol, Key Lab Precis & Nontrad Machining, Minist Educ, Dalian 116024, Peoples R China

[2] Univ New S Wales, Sch Mech & Manufacturing Engn, Sydney, NSW 2052, Australia

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 15期

关键词：

MgO single crystal; substrate; scratch; chemical mechanical polishing; surface roughness;

D O I：

10.1016/j.apsusc.2008.01.150

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Etching and chemical mechanical polishing (CMP) experiments of the MgO single crystal substrate with an artificial scratch on its surface are respectively performed with the developed polishing slurry mainly containing 2 vol.% phosphoric acid (H3PO4) and 10-20 nm colloidal silica particles, through observing the variations of the scratch topography on the substrate surface in experiments process, the mechanism and effect of removing scratch during etching and polishing are studied, some evaluating indexes for effect of removing scratch are presented. Finally, chemical mechanical polishing experiments of the MgO substrates after lapped are conducted by using different kinds of polishing pads, and influences of the polishing pad hardness on removal of the scratches on the MgO substrate surface are discussed. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4856 / 4863

页数：8

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