Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire

被引:61
|
作者
Golan, Y [1 ]
Wu, XH
Speck, JS
Vaudo, RP
Phanse, VM
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Epitronics, Danbury, CT 06776 USA
关键词
D O I
10.1063/1.122682
中图分类号
O59 [应用物理学];
学科分类号
摘要
The early stages of hydride vapor phase epitaxy (HVPE) of GaN on sapphire were studied using atomic force microscopy, field-emission scanning electron microscopy, cross-sectional transmission electron microscopy, and x-ray diffraction rocking curves. At the high growth rate used (similar to 33 nm/s), the films appear to be fully coalesced for growth periods as short as 1 s. A distinct surface and subsequent bulk transformation were observed, resulting in significantly smoother film surfaces and improved bulk morphology. The growth of thick (i.e., 300 mu m) GaN films using HVPE offers a promising technique for the deposition of high-quality substrates for GaN homoepitaxy. (C) 1998 American Institute of Physics. [S0003-6951(98)02247-5].
引用
收藏
页码:3090 / 3092
页数:3
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