Erratum: 'morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire' [Appl. Phys. Lett. 73, 3090 (1998)]

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Appl Phys Lett | / 10卷 / 1498期

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[1] Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (vol 73, pg 3090, 1998)
Golan, Y
Wu, XH
Speck, JS
Vaudo, RP
Phanse, VM
APPLIED PHYSICS LETTERS, 1999, 74 (10) : 1498 - 1498
[2] Erratum: 'antireflection coatings for PbSe diode lasers' [Appl. Phys. Lett. 73, 1191 (1998)]
Beyer, T.
Tacke, M.
Applied Physics Letters, 1998, 73 (15):
[3] Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire
Golan, Y
Wu, XH
Speck, JS
Vaudo, RP
Phanse, VM
APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3090 - 3092
[4] Erratum: 'transverse thermoelectric response of a tilted metallic multilayer structure' [Appl. Phys. Lett. 73, 1364 (1998)]
Zahner, Th.
Forg, R.
Lengfellner, H.
Applied Physics Letters, 1998, 73 (15):
[5] Erratum: 'magnetoresistance due to domain walls in an epitaxial microfabricated Fe wire' [Appl. Phys. Lett. 73, 1298 (1998)]
Rudiger, U.
Yu, J.
Kent, A.D.
Parkin, S.S.P.
Applied Physics Letters, 1998, 73 (15):
[6] Erratum: `Suppressed diffusion of boron and carbon in carbon-rich silicon' [Appl. Phys. Lett. 73, 1682 (1998)]
Appl Phys Lett, 1 (147):
[7] Erratum: 'structural and magneto-transport properties of electrodeposited bismuth nanowires' [Appl. Phys. Lett. 73, 1436 (1998)]
Liu, Kai
Chien, C.L.
Searson, P.C.
Yu-Zhang, Kui
Applied Physics Letters, 1998, 73 (15):
[8] Erratum: 'carbon nanotube tipped atomic force microscopy for measurement of <100 nm etch morphology on semiconductors' [Appl. Phys. Lett. 73, 529 (1998)]
Nagy, G.
Levy, M.
Scarmozzino, R.
Osgood, R.M. Jr.
Dai, H.
Smalley, R.E.
Michaels, C.A.
Sevy, E.T.
Flynn, G.W.
McLane, G.F.
Applied Physics Letters, 1998, 73 (10):
[9] Erratum: 'aluminum based cathode structure for enhanced electron injection in electroluminescent organic devices' [Appl. Phys. Lett. 73, 1185 (1998)]
Jabbour, G.E.
Kippelen, B.
Armstrong, N.R.
Peyghambarian, N.
Applied Physics Letters, 1998, 73 (15):
[10] Erratum:: "Interfacial structure of a-plane GaN grown on r-plane sapphire" [Appl. Phys. Lett. 90, 081918 (2007)]
Kroeger, R.
Paskova, T.
Figge, S.
Hommel, D.
Rosenauer, A.
Monemar, B.
APPLIED PHYSICS LETTERS, 2007, 90 (24)

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