Recent advances in TLM algorithms for semiconductor transport

被引：1
|
作者：
deCogan, D
Chakrabarti, A
Kenny, CP
机构：
来源：
SOLID STATE CRYSTALS IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 1997年 / 3179卷
关键词：
transmission line matrix; TLM; numerical modelling; semiconductors; transport models;
D O I：
10.1117/12.276238
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Transmission Line Matrix (TLM) is a numerical technique which can be used to Simulate wide range of physical processes. In the area of semiconductor device modelling the correct choice of electromagnetic analogue can have a strong influence on the stability, accuracy and efficiency of algorithms. This paper reviews recent progress in TLM with particular attention to the drift-diffusion process in carrier transport in semiconductors.
引用
收藏
页码：274 / 286
页数：13
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