ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition

被引：18

作者：

Kawamura, Yumi ^{[1
]}

Hattori, Nozomu ^{[2
]}

Miyatake, Naomasa ^{[2
]}

Horita, Masahiro ^{[1
]}

Uraoka, Yukiharu ^{[3
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Mitsui Engn & Shipbilding Co Ltd, Okayama 7060014, Japan

[3] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

关键词：

D O I：

10.1143/JJAP.50.04DF05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated zinc oxide (ZnO) thin films prepared by plasma-assisted atomic layer deposition (PA-ALD), and thin film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. The dependences of the electrical characteristics of the fabricated TFTs on the plasma condition were evaluated. The plasma injection time dependence of the transfer characteristics, the refractive index, and the impurity concentration revealed that insufficient oxidation degrades the performance of ZnO TFTs. On the basis of the experimental results, high-performance ZnO TFTs can be obtained by PA-ALD at a low temperature. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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